Sunforge Heterojunction (HJT) panels combine crystalline silicon (c-Si) with amorphous silicon (a-Si:H) layers, creating a symmetrical cell structure that achieves superior passivation, higher voltage, and minimal electron loss.
This design delivers unmatched efficiency, reliability, and temperature stability, setting a new benchmark for photovoltaic performance.
Cell efficiencies up to 26%, with panel outputs reaching 735 W (Vulcain Series).
Only -0.24 %/°C, maintaining power even in extreme heat.
Retains up to 97 % of output in cloudy or low-irradiance conditions.
Up to 95 %, capturing reflected light for greater total yield.
< 1 % first-year degradation, 0.3 % annual thereafter.
Low-temperature (< 200 °C) process with no hazardous wastewater, reducing environmental impact.
| Specification | Typical Value |
|---|---|
| Power Output Range | 500 - 735 W |
| Module Efficiency | Up to 23.7 % |
| Bifaciality | 95% |
| Cell Type | HJT ZBB 132 |
| Frame | Dual 2 mm (front & back) |
| Operating Temp. Coefficient (Pmax) | MC4 / MC4-Evo2 |
| Front/Rear Load | -5400 Pa / 2400 Pa |
Sunforge HJT modules integrate Zero Busbar (ZBB) technology to:
Result: a sleeker, more efficient, and longer-lasting solar panel.
